| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively suppress the breakdown of an input circuit caused by applying an ESD surge voltage as it is to the input circuit through an output circuit, in a semiconductor device including the output circuit and the input circuit which are supplied with power source voltages from different power source systems. <P>SOLUTION: The semiconductor device includes a first power source pad 11, a first ground pad 12, a first power source line 13, a first ground line 14, an output circuit 15, a second power source pad 21, a second ground pad 22, a second power source line 23, a second ground line 24, an input circuit 25, a signal line 20, a main ESD protection element 16, a protection diode pair D1, and a PMOS transistor P2. The output circuit 15 includes a PMOS transistor P3, and the input circuit includes an NMOS transistor N1. In the PMOS transistor P2, a source is connected to the signal line 20, a drain is connected to the second ground line 24, and a gate and a back gate are connected to the second power source line 23. <P>COPYRIGHT: (C)2011,JPO&INPIT |
