| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the reliability of memory cells, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor device includes: a memory cell array including a plurality of memory cells M; a plurality of word lines WL that are mutually connected with the memory cells M disposed in the line direction of the plurality of memory cells; a plurality of bit lines BL that are mutually connected with the disposed memory cells M in a column direction of the plurality of memory cells M; a fuse that stores fuse data whose writing procedure is specified in the memory cells M that are connected with odd and even numbers of the bit lines BL, respectively, so that a memory cell M with smaller threshold distribution out of the memory cells M that are connected with odd and even numbers of the bit lines BL are written in when data are written in the memory cells M. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
