| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory device that prevents a variation in a start-up time of a word line, and cell characteristics by adapting the boosting capability of a charge pump to the amount of the word line in writing operation while preventing are increased in memory area. <P>SOLUTION: The memory device includes: the word lines; the charge pump that applies first to n-th (n is an integer of≤2) voltages which are different from one another in the writing operation; an application-voltage selector that selects voltages applied to the word lines among the first to n-th voltages; a word-line number register that stores the number of the word line numbers to which each of the first to n-th voltages is applied for the first to n-th voltages; a storage part that stores a correspondence table that stores a relationship between the number of the word lines for each of the first to n-th voltages and the number of charge pumps allocated to the first to n-th voltages; and a generation-voltage selector that allocates the charge pumps to generate the first to n-th voltages according to the number of word lines. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
