发明名称 SEMICONDUCTOR CIRCUIT, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To protect an element from an excess voltage in a simple circuit configuration. SOLUTION: In an N1 where a resistance value is controllable with a high voltage, a drain terminal is connected via a resistance R6 to the gate terminal (control terminal) of an output element N<SB>O</SB>5, a source terminal is connected to the emitter terminal of the output element N<SB>O</SB>5, and a gate terminal is connected to a collector terminal as the output terminal of the output element N<SB>O</SB>5. When the input terminal is an Hi level, the output element N<SB>O</SB>5 is turned off, and the output terminal of the output element N<SB>O</SB>5 is connected to the high potential side of a high voltage circuit separately installed in this state, and when the minus electrode of a VDD4 is connected to the low potential side, a desired high voltage is applied between the collector and emitter of the output element N<SB>O</SB>5. When the input terminal is switched to an Lo level, a P<SB>D</SB>2 is turned on, and since a high voltage is still applied to the output terminal of the output element N<SB>O</SB>5, the N1 is also turned on, and the current driving capability of the output element No5 is turned on though in a low state. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011176872(A) 申请公布日期 2011.09.08
申请号 JP20110096720 申请日期 2011.04.25
申请人 FUJI ELECTRIC CO LTD 发明人 SHIMABUKURO HIROSHI;KOBAYASHI HIDETO;SHIGETA YOSHIHIRO;TADA HAJIME
分类号 H03K17/08 主分类号 H03K17/08
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