| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide film forming method in which a gate oxide film with high reliability is obtained by thermally oxidizing an SiC substrate. SOLUTION: A method of manufacturing a semiconductor device includes a process of simultaneously introducing hydrogen and oxygen onto the SiC substrate 1, and a process of subjecting the hydrogen and oxygen to combustion reaction on the SiC substrate 1 under conditions of a temperature of≥1,000°C and reduced pressure, and thereby forming the gate oxide film 4 as a silicon oxide film on the surface of the SiC substrate 1 through the combustion reaction. COPYRIGHT: (C)2011,JPO&INPIT |
