| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device, having a structure for reducing nonuniformity in light emission characteristics due to the membrane stress nonuniformity caused by the film thickness of a metal plated layer formed. SOLUTION: A semiconductor laser device includes a semiconductor substrate 9; a first electrode 1 formed on a first surface 9a of the semiconductor substrate 9; a semiconductor layer 2 formed on a second surface 9b of the semiconductor substrate 9; an insulating layer 12 formed on the surface of the semiconductor layer 2; a second electrode 3 formed on the surface of the insulating layer; a metal plated layer 14 formed on the surface of the second electrode 3; and an active layer 2b, which is formed in the semiconductor layer 2 and which serves as a light-emitting portion 7. A groove 17 is formed on one side of a center position of the light-emitting portion in the semiconductor layer; the surface of the second electrode formed on the bottom portion of the groove is formed to a depth positioned on a first electrode side, below an interface between the semiconductor substrate and the semiconductor layer; and the surface of the metal plating layer formed on the surface of the groove is formed to a depth located at the first electrode side below the interface. COPYRIGHT: (C)2011,JPO&INPIT |
