| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device that is improved in radiation resistance characteristics, and to provide a method of manufacturing the semiconductor integrated device. SOLUTION: In a boundary-nearby region adjoining a boundary with an insulating layer in a silicon thin film layer formed on the upper surface of the insulating layer on a semiconductor support substrate, a region where concentration of impurities becomes higher as it is closer to the boundary, is formed. COPYRIGHT: (C)2011,JPO&INPIT |
