SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED FROM THE SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2 x 10 18 cm -3 to 6 x 10 20 cm -3 and acceptor-type impurity at a concentration of 1 x 10 18 cm -3 to 5.99 x 10 20 cm -3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1 x 10 18 cm -3 to 5.99 x 10 20 cm -3 , and a substrate and epitaxial wafer obtained therefrom.