| 摘要 |
Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor (228) formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode (226), and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer (204) atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed. |
