发明名称 |
High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same |
摘要 |
High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode (28), a gate electrode (30) and a drain electrode (32) disposed on a plurality of semiconductor layers having different polarities. A dual depletion region (AZ) exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer (26), an intermediate material layer (22) and a lower material layer (20), and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer. |
申请公布号 |
EP2363890(A2) |
申请公布日期 |
2011.09.07 |
申请号 |
EP20110156472 |
申请日期 |
2011.03.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, IN-JUN;KIM, JONG-SEOB;CHOI, HYUK-SOON;HONG, KI-HA;SHIN, JAI-KWANG;OH, JAE-JOON |
分类号 |
H01L29/778;H01L21/338;H01L29/06;H01L29/20;H01L29/417;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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