发明名称 |
Transistor performance improving method with metal gate |
摘要 |
The present disclosure provides a method for making a semiconductor device having metal gate stacks. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a first metal layer on the high k dielectric material layer; forming a silicon layer on the first metal layer; patterning the silicon layer, the first metal layer and the high k dielectric material layer to form a gate stack; and performing a silicidation process to fully change the silicon layer into a silicide electrode.
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申请公布号 |
US8012817(B2) |
申请公布日期 |
2011.09.06 |
申请号 |
US20090437696 |
申请日期 |
2009.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
MASUOKA YURI;HUANG HUAN-TSUNG |
分类号 |
H01L21/336;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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