| 摘要 |
733,095. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. Dec. 12, 1952 [Dec. 17, 1951], No. 31558/52. Class 37. In a dry plate rectifier comprising germanium or silicon, the base electrode layer and semiconductor are annealed at a first temperature to provide a low-resistance ohmic contact, and then the counter electrode is applied and the assembly heated to a lower temperature to enhance the asymmetric effect between the counter electrode and the semi-conductor. The base electrode may comprise 'silver, rhodium, copper or aluminium applied by evaporation, welding, spraying, soldering or electroplating. The annealing temperature may be 450‹ C. for germanium and 800‹ C. for silicon.
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