发明名称 Method of fabricating an integrated CMOS-MEMS device
摘要 An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.
申请公布号 US8012785(B2) 申请公布日期 2011.09.06
申请号 US20090429305 申请日期 2009.04.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIANG KAI-CHIH;WU HUA-SHU;PENG LI-CHUN;HUANG TSUNG-CHENG;LIU MINGO;SHEN NICK Y. M.;CHANG ALLEN TIMOTHY
分类号 H01L21/00;H01L27/14 主分类号 H01L21/00
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