发明名称 |
Light-emitting diode device with a double-layer contact structure and a fabrication method thereof |
摘要 |
The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption.
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申请公布号 |
US8013322(B2) |
申请公布日期 |
2011.09.06 |
申请号 |
US20080274239 |
申请日期 |
2008.11.19 |
申请人 |
HUGA OPTOTECH INC. |
发明人 |
HONG MING-HUANG;TSAI TZONG-LIANG |
分类号 |
H01L29/06;H01L33/14;H01L33/38;H01L33/42 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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