发明名称 Light-emitting diode device with a double-layer contact structure and a fabrication method thereof
摘要 The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption.
申请公布号 US8013322(B2) 申请公布日期 2011.09.06
申请号 US20080274239 申请日期 2008.11.19
申请人 HUGA OPTOTECH INC. 发明人 HONG MING-HUANG;TSAI TZONG-LIANG
分类号 H01L29/06;H01L33/14;H01L33/38;H01L33/42 主分类号 H01L29/06
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