| 摘要 |
A semiconductor contact structure includes a copper plug formed within a dual damascene, single damascene or other opening formed in a dielectric material and includes a composite barrier layer between the copper plug and the sidewalls and bottom of the opening. The composite barrier layer preferably includes an ALD TaN layer disposed on the bottom and along the sides of the opening although other suitable ALD layers may be used. A barrier material is disposed between the copper plug and the ALD layer. The barrier layer may be a Mn-based barrier layer, a Cr-based barrier layer, a V-based barrier layer, a Nb-based barrier layer, a Ti-based barrier layer, or other suitable barrier layers.
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