发明名称 |
III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE |
摘要 |
An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050 °C, but also with Al x Ga 1-x N, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf. |
申请公布号 |
KR20110099040(A) |
申请公布日期 |
2011.09.05 |
申请号 |
KR20117016554 |
申请日期 |
2009.12.25 |
申请人 |
DOWA HOLDINGS CO., LTD.;DOWA ELECTRONICS MATERIALS CO., LTD. |
发明人 |
TOBA RYUICHI;MIYASHITA MASAHITO;TOYOTA TATSUNORI |
分类号 |
H01L21/20;C30B29/38;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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