RESIST UNDERLAYER FILM FORMING METHOD, PATTERN FORMING METHOD AND COMPOSITION, ADDITIVE FOR RESIST UNDERLAYER FILM FORMING MATERIAL, CROSSLINKING AGENT, AND RESIST UNDERLAYER FILM

摘要

PROBLEM TO BE SOLVED: To provide a resist underlayer film-forming method capable of forming a resist underlayer film that has a function as an antireflective film and that is excellent in pattern transfer performance and etching resistance, to provide an underlayer film that does not bend in micronized pattern transfer and a method of forming the underlayer; and also to provide a pattern forming method.

SOLUTION: The resist underlayer film is formed of a composition containing (A) a resin containing an aromatic ring and (B) a compound expressed by general formula (i).

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