NONVOLATILE MEMORY DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a programming method of a nonvolatile memory device in which reliability is improved.

SOLUTION: A nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method of the nonvolatile memory device includes a stage in which a first positive voltage is applied to at least selected one bit line, a stage in which a second positive voltage is applied to at least one unselected bit line, a stage in which a third positive voltage is applied to selected string selected line, a stage in which a fourth positive voltage is applied to unselected string selection line, and a stage in which a program operation voltage is applied to word lines or the like.

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