POWER SEMICONDUCTOR DEVICE

摘要

A structure of a power semiconductor device, in which a P-well region having a large area and a gate electrode are opposed to each other through a field oxide film having a larger thickness than that of a gate insulating film such that the P-well region having a large area and the gate electrode are not opposed to each other through the gate insulating film, or the gate electrode is not provided above the gate insulating film that includes the P-well region having a large area therebelow.