| 摘要 |
According to one embodiment, a semiconductor device including a tunnel FET, includes a gate electrode, which is formed on a first semiconductor layer formed of Si1-XGeX (0<x≦̸1) through a gate insulating film, a source electrode, which is formed of a compound of a second semiconductor formed mainly using Ge and a metal, a drain electrode, which is formed of a compound of the first semiconductor layer and the metal, and a silicon (Si) thin film, which is formed between the source electrode and the first semiconductor layer. An edge portion of the source electrode and an edge portion of the drain electrode have a positional relationship of Asymmetrical to the gate electrode. The edge portion of the drain electrode is far away from an edge portion of the gate electrode toward a gate external direction compared with the edge portion of the source electrode.
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