| 摘要 |
PURPOSE: A stack USB memory device and a manufacturing method thereof are provided to reduce the size of the stack USB memory device by mounting a passive device and a control semiconductor chip in a recess region. CONSTITUTION: A substrate(100) includes one or more recess regions(102). A plurality of passive devices(110) are mounted in one or more recess regions. A plurality of control semiconductor chips(120) are mounted in one or more recess regions. The control semiconductor chip is electrically connected to a first wiring pattern(104) by a first connection member(122). A memory semiconductor chip(140) is mounted on a first surface(101) of the substrate. |
