| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of fabricating the same which can suppress occurrence of a short-circuit, by embedding a first groove with an SOD film excellent in embedding characteristics. SOLUTION: A first SOD (Spin On Dielectric) film is embedded into a first groove 17, and the first SOD film is modified at a high temperature to form a first insulating film 45. A second SOD film 46 composed of the same material as that of the first SOD film is embedded into the first groove 17 in a portion positioned on the first insulating film 45, and the second SOD film 46 is modified at a lower temperature than that for modifying the first SOD film to form a second insulating film 27. Thereafter, the first insulating film 45 is removed by wet etching. COPYRIGHT: (C)2011,JPO&INPIT
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