| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage device that achieves high capacity and integration, while reducing malfunction of a magnetic memory element due to an induction field generated by current flowing in wiring. SOLUTION: The magnetic storage device includes a plurality of magnetic memory elements 3 and bit lines 4, a plurality of transistors 2 and a magnetic shielding magnetic films 22. The magnetic memory element 3 includes a fixed layer 19 whose magnetization direction is fixed, a storage layer 21 whose magnetization direction is variable and a tunnel insulating film 20 arranged between the fixed layer 19 and the storage layer 21, and the element inverts the magnetization direction of the storage layer 21 by electrons which are spin-polarized. In a bit line 4, the plurality of magnetic memory elements 3 are connected by leaving a prescribed interval and the bit line 4 is disposed by facing the plurality of magnetic memory elements 3. The transistor 2 is electrically connected to the bit line 4 via the corresponding magnetic memory element 3 in the plurality of magnetic memory elements 3. The magnetic shielding magnetic film 22 is installed between the bit line 4 and the magnetic memory element 3. COPYRIGHT: (C)2011,JPO&INPIT
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