| 摘要 |
A semiconductor device including: a thin film transistor substrate; and a driving circuit, wherein the thin film transistor substrate includes: a thin film transistor includes: a gate electrode; a gate insulating film that is formed on the insulating substrate and the gate electrode; a semiconductor layer that is formed on the gate insulating film; a channel protecting film; and a source electrode and a drain electrode that are formed to connect with the semiconductor layer; and a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit, wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate; and wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode. |
