| 摘要 |
<p>Disclosed is a non-volatile semiconductor storage device containing a MISFET (16) disposed on a semiconductor substrate (2) of a first conductivity type, and a MIS capacitor (17) on a first well (3) of a second conductivity type. The MISFET (16) comprises a gate insulating film (4) disposed on the semiconductor substrate (2), a gate electrode (6a) disposed on the gate insulating film (4), and a source and drain impurity layer (7, 8) disposed on both sides of the gate electrode (6a). The MIS capacitor (17) comprises a capacitor insulating film (5) disposed on the first well (3) functioning as a first electrode, a second electrode (6b) disposed on the capacitor insulating film (5), and first impurity layers (11a, 11b) of a first conductivity type. A floating gate (6) is configured by electrically connecting the gate electrode (6a) and the second electrode (6b). The gate insulating film (4) and the capacitor insulating film (5) are formed from the same material and have the same thickness. The gate electrode (6a) and the second electrode (6b) are formed from the same conductive film. A second impurity layer (14) is formed on and over the boundary of the semiconductor substrate (2) and the first well (3).</p> |
