| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide atomic layer deposition equipment which generates plasma stably. <P>SOLUTION: The atomic layer deposition equipment which forms a thin film on a substrate, is equipped with: a material gas supply which supplies material gas, i.e. the material of a thin film; an oxidation gas supply which supplies oxidation gas that reacts on the material gas to form a thin film; a plasma generator which generates plasma of oxidation gas; and an exhauster which exhausts the material gas and oxidation gas. The oxidation gas supply is equipped with: an oxygen gas reservoir which stores oxygen gas; and an ozone generator which generates ozone from oxygen gas stored in the oxygen gas reservoir. <P>COPYRIGHT: (C)2011,JPO&INPIT |
