| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which controls disturbance at writing/erasing and suppresses an increase in area. <P>SOLUTION: The nonvolatile semiconductor memory device includes a first well region of a first conductivity type in which a first cell array 32 containing a plurality of memory cells MC has been formed, a second well region of a first conductivity type in which a second cell array 32 containing a plurality of memory cells MC has been formed, and a third well region of a second conductivity type containing the first and second well regions, and further includes a bit line BL commonly connected to a memory cell which the first cell array 32 contains and a memory cell which the second cell array 32 contains and a column decoder 13 connected to the bit line BL. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
