FILM-DEPOSITION DEVICE AND MAINTENANCE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a film-deposition device capable of rapidly and simply treating a byproduct containing polysilane generated when a silicon film is film-deposited when the silicon film is not film-deposited.

SOLUTION: The film-deposition device includes at least a film-deposition chamber 11 film-depositing the silicon film on a substrate W in vacuum using a CVD method and a first ozone-containing gas supplying means 180 capable of introducing an ozone-containing gas into the film-deposition chamber. The byproduct containing the polysilane generated during the film-deposition of the silicon film is oxidized by introducing the ozone-containing gas into the film-deposition chamber where the film-deposition of the silicon film is completed.

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