CONTACT PLUG, WIRING, SEMICONDUCTOR DEVICE AND METHOD FOR FORMING CONTACT PLUG

摘要

PROBLEM TO BE SOLVED: To surely suppress diffusion and penetration of copper atoms into a metal silicide film, while using a diffusion barrier layer composed of manganese oxide in the form of a thin film as a diffusion barrier layer between the metal silicide film and a copper contact plug body. SOLUTION: A contact plug 10 is formed on a contact hole 5 provided in an insulating film 4 of a semiconductor device, and is equipped with: the metal silicide film 3 formed on a bottom part of the contact hole 5; a first manganese oxide film 6a which is formed on the metal silicide layer 3 in the contact hole 5 and amorphous, and includes silicon; a second manganese oxide film 6b which is formed on the first manganese oxide film 6a and amorphous and includes microcrystal; and a copper plug layer 7 which is formed on the second manganese oxide film 6a to substantially fill the contact hole. COPYRIGHT: (C)2011,JPO&INPIT