| 摘要 |
According to one embodiment, a semiconductor device includes: a lead group including a plurality of leads; a plurality of semiconductor memory chips stacked in a step shape on the lead group; and a resin mold section that seals the semiconductor memory chips. One end of a third lead and the other end of a second lead is connected by a metal wire for relay crossing over a first lead section included in the lead group. The metal wire for relay is provided in a space between the semiconductor memory chips stacked in the step shape and the lead group.
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