发明名称 HYBRID IN-SITU DRY CLEANING OF OXIDIZED SURFACE LAYERS
摘要 According to one embodiment, the method includes providing a substrate containing a metal-containing barrier layer having an oxidized surface layer, exposing the oxidized surface layer to a flow of a first process gas containing plasma-excited argon gas to activate the oxidized surface layer and applying substrate bias power during the exposing of the oxidized surface layer to the flow of the first process gas. The method further includes exposing the activated oxidized surface layer to a second process gas containing non-plasma-excited hydrogen gas, wherein the exposure to the first process gas, in addition to activating the oxidized surface layer, facilitates chemical reduction of the activated oxidized surface layer by the second process gas containing the hydrogen gas. A thickness of the metal-containing barrier layer is not substantially changed by the hybrid in-situ dry cleaning process.
申请公布号 KR20110098683(A) 申请公布日期 2011.09.01
申请号 KR20110017459 申请日期 2011.02.25
申请人 TOKYO ELECTRON LIMITED 发明人 SELSLEY ADAM;CERIO FRANK M. JR.
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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