| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a programming operation method for a flash memory device, capable of reducing the size of a flash memory device by using a data verification circuit to perform a programming operation of a multi-level cell without a data comparison circuit. <P>SOLUTION: The programming operation method for a flash memory device includes: a plurality of multi-level cells connected to a plurality of bit line pairs and a plurality of word lines respectively; and a page buffer circuit including a high-order bit register for storing input data and outputting the input data or inverted input data, and a low-order bit register for receiving the transmission of the input data through the high-order bit register. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
