| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection element that is excellent in both anti-ESD protection performance and latch-up resistance performance, and small in layout area. SOLUTION: The electrostatic discharge protection element has: a first well of a first-conductivity type which is formed at a surface of a semiconductor substrate and rectangular viewed from a direction vertical to the surface of the semiconductor substrate; and a second well of a first-conductivity type which is formed to surround the first well of first-conductivity type at the surface of the semiconductor substrate, in contact with an end edge extended in a second direction perpendicular to a first direction at the first well of the first-conductivity type and not in contact with an end edge extended in the first direction, and to which reference potential is applied. The resistivity of a region between an end edge extended in the first direction of the first well of the first-conductivity type and the second well of the first-conductivity type is higher than the resistivity of the first and second wells of the first-conductivity type. COPYRIGHT: (C)2011,JPO&INPIT |
