发明名称 HBAR Resonator with a High Level of Integration
摘要 The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterised in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarisation direction P of the shearing mode of the transducer (6) and the direction of polarisation P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle &thetas;2 are aligned, and the second cutting angle &thetas;2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.
申请公布号 US2011210802(A1) 申请公布日期 2011.09.01
申请号 US20090995572 申请日期 2009.05.29
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) 发明人 BALLANDRAS SYLVAIN;GACHON DORIAN
分类号 H03B5/32;H03H3/02;H03H9/15 主分类号 H03B5/32
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