A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.
申请公布号
WO2011106203(A2)
申请公布日期
2011.09.01
申请号
WO2011US24948
申请日期
2011.02.16
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;BEDELL, STEPHEN, W;FOGEL, KEITH, E;LAURO, PAUL, A;SADANA, DEVENDRA;SHAHRJERDI, DAVOOD