| 摘要 |
<p>Disclosed is a method for manufacturing a semiconductor device using a substrate processing apparatus, which is provided with a reaction chamber wherein a plurality of substrates are laminated at predetermined intervals, a first gas supply nozzle having one or more first gas supply ports in a region where the substrates are laminated, and a second gas supply nozzle having one or more second gas supply ports in the region where the substrates are laminated, and which has the first gas supply port direction and the second gas supply port direction intersect each other before reaching the substrates. The method has: a step wherein the substrates are carried into the reaction chamber; a step wherein at least a silicon-containing gas and a chlorine-containing gas, or a gas containing silicon and chlorine is supplied to the reaction chamber from the first gas supply port, and at least a carbon-containing gas and a reducing gas are supplied to the chamber from the second gas supply port, furthermore, an impurity gas is supplied to the reaction chamber from the first gas supply port or the second gas supply port, and films are formed on the substrates; and a step wherein the substrates are carried out from the reaction chamber.</p> |
