| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an erasure technique to make an erasure speed uniform on each memory cell basis in a NAND string. <P>SOLUTION: In order to equalize the erasure operation of a plurality of memory cells, a correction voltage is applied to a nonvolatile memory system during the erasure operation. The correction voltage corrects a voltage static-capacity-coupled with the memory cells in the NAND string from other memory cells and/or selection gates. By applying a correction voltage to one or more memory cells, it is possible to make preferable the erasure operation of the memory cells virtually. By applying the correction voltage to the end portion of the memory cells in the NAND string, it is possible to equalize the erasure operation thereof with the erasure operation of the internal memory cells in the NAND string. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
