发明名称 METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER AND NITRIDE SEMICONDUCTOR SUBSTRATE FORMED USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of growing a nitride semiconductor layer, and a nitride semiconductor substrate formed using the same. <P>SOLUTION: A method of growing a nitride semiconductor layer includes: preparing a substrate; forming nitride semiconductor dots on the substrate: and growing a nitride semiconductor layer on the nitride semiconductor dots. The grown nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011168481(A) 申请公布日期 2011.09.01
申请号 JP20110033451 申请日期 2011.02.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK SUNG-SOO;LEE WEN-HSIANG
分类号 C30B29/38;C30B25/18;H01L21/205 主分类号 C30B29/38
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