发明名称 |
METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER AND NITRIDE SEMICONDUCTOR SUBSTRATE FORMED USING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of growing a nitride semiconductor layer, and a nitride semiconductor substrate formed using the same. <P>SOLUTION: A method of growing a nitride semiconductor layer includes: preparing a substrate; forming nitride semiconductor dots on the substrate: and growing a nitride semiconductor layer on the nitride semiconductor dots. The grown nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011168481(A) |
申请公布日期 |
2011.09.01 |
申请号 |
JP20110033451 |
申请日期 |
2011.02.18 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK SUNG-SOO;LEE WEN-HSIANG |
分类号 |
C30B29/38;C30B25/18;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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