发明名称 |
SUBSTRATE TREATMENT DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment device capable of reducing the frequency of maintenance and determining an appropriate time of maintenance. SOLUTION: The substrate treatment device 10 includes: an ion source 40 for generating ions; a target 36 receiving an ion beam 45 from the ion source 40; a wafer holder 18 housed in a first vacuum chamber 11 and holding a wafer 1 that receives sputtered particles 46 from the target 36; an adhesion preventing plate 51 suppressing adhesion of sputtered particles 46 to a second vacuum chamber 22; and an adhesion amount predicting unit 61 predicting an adhesion amount of the particles 46 stuck to the adhesion preventing plate 51. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011168825(A) |
申请公布日期 |
2011.09.01 |
申请号 |
JP20100032553 |
申请日期 |
2010.02.17 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
HARA DAISUKE;NIIMURA NORIHIRO;MUROBAYASHI MASASUE |
分类号 |
C23C14/46;C23C14/00;H01L21/8246;H01L27/105;H01L29/82;H01L43/08;H01L43/12 |
主分类号 |
C23C14/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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