| 摘要 |
<p>Disclosed is a polycrystalline silicon for solar cells, which is manufactured by an electromagnetic induction continuous casting method using a cooling crucible. The polycrystalline silicon, which has excellent crystallinity and a long lifetime, and which is suitable as a substrate material for solar cells is provided by maintaining a region within 300 mm from the solidification interface at 1275°C or higher, and having a lifetime of 80 µsec or more after diffusion of phosphorus. The temperature of the region within 300 mm from the solidification interface is preferably kept at 1280°C or higher, since at such temperature, higher conversion efficiency can be expected when a solar cell is configured by using the polycrystalline silicon as a substrate.</p> |
