| 摘要 |
<p>Disclosed is a photoelectric conversion device that includes a fine crystal silicon layer as a power generating layer, wherein an open voltage is improved without deteriorating a fill factor. The photoelectric conversion device is provided with a multilayer structure configured of a p-type layer (40) containing a p-type dopant, an i-type layer (42) containing the fine crystal silicon layer to be the power generating layer, and an n-type layer (44) containing an n-type dopant. The i-type layer (42) is provided between the p-type layer (40) and the n-type layer (44), and has a structure which is provided with a fine crystal silicon carbide layer (42a) having a film thickness of 50-300 nm.</p> |
