| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance of an organic semiconductor device, without making a device fabricating process very complex. SOLUTION: For example, in the organic semiconductor FET shown in the figure, a current flowing from a source or drain electrode 4 to an opposite-side electrode concentrates on an end of the electrode 4 which is close to the opposite-side electrode. A metal oxide layer 5 is provided there. Through charge migration between an organic semiconductor layer 3 and the metal oxide layer 5, a region including a plenty of carriers and a small number of traps is formed up to near the end of the electrode 4 in which the current concentrates, thereby the contact resistance is greatly reduced. COPYRIGHT: (C)2011,JPO&INPIT |
