| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element which has a low resistance charge transfer electrode formed of a metal material film and is highly sensitive and can be driven at a high rate, and to provide a method of manufacturing the same. SOLUTION: A semiconductor substrate 1 is provided with a photodiode 2 for generating a signal charge according to incident light by photoelectric conversion and a charge transfer portion 4 for transferring the signal charge generated in the photodiode 2. A gate insulating film 5 is provided on the surface of the semiconductor substrate 1. The gate insulating film 5 includes a thin film portion 5b covering the photodiode 2 and a thick film 5a which has a film thickness thicker than that of the thin film 5b and covers the charge transfer portion 4. A charge transfer electrode 14a which transfers the signal charge in the charge transfer portion 4 and comprises a metal material film is provided on the top of the thick film portion 5a of the gate insulating film 5 which covers the charge transfer portion 4. COPYRIGHT: (C)2011,JPO&INPIT
|
