METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE

摘要

Disclosed is a manufacturing method, whereby a nonvolatile memory device having a stable memory performance can be manufactured with a simple process. The method includes: a step wherein a laminated structure is formed by alternately laminating, on a substrate (11), a plurality of conductive layers (13) containing a transition metal, and a plurality of interlayer insulating films (17) composed of an insulating material; a step wherein a contact hole, which penetrates the laminated structure and exposes parts of the respective conductive layers (13) is formed; a step wherein the conductive layer (13) parts exposed in the contact hole are oxidized, and variable-resistance layers (14) wherein resistance values reversibly change on the basis of electrical signals transmitted thereto are formed; and a step wherein a conductive material is embedded in the contact hole, and a columnar electrode (12) connected to the variable-resistance layers (14) is formed in the contact hole.