SEMICONDUCTOR DEVICE WITH VIAS HAVING MORE THAN ONE MATERIAL

摘要

A semiconductor die includes a via within a substrate material of the semiconductor die. The via includes a first conductive material having a first Coefficient of Thermal Expansion (CTE) and a second conductive material between the first conductive material and the substrate material of the semiconductor die. The second conductive material has a second CTE between the first CTE and a CTE of the substrate material of the semiconductor die. The first conductive material can be copper. The second conductive material can be tungsten and/or nickel. The substrate material can be silicon.