| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for conditioning a silicon-containing film. <P>SOLUTION: Provided is a method for forming a dielectric film containing silicon, oxide, elements optionally selected from a group of nitrogen, carbon, and hydrogen, and boron. Furthermore, another method is provided to form a dielectric film or coating is formed on an object to be processed such as, for example, a semiconductor wafer or the like. <P>COPYRIGHT: (C)2011,JPO&INPIT |
