发明名称 |
LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type. |
申请公布号 |
US2011212559(A1) |
申请公布日期 |
2011.09.01 |
申请号 |
US201113102404 |
申请日期 |
2011.05.06 |
申请人 |
SONY CORPORATION |
发明人 |
OHMAE AKIRA;SHIOMI MICHINORI;FUTAGAWA NORIYUKI;AMI TAKAAKI;MIYAJIMA TAKAO;HIRAMATSU YUUJI;HATADA IZUHO;OKANO NOBUTAKA;TOMIYA SHIGETAKA;YANASHIMA KATSUNORI;HINO TOMONORI;NARUI HIRONOBU |
分类号 |
H01L33/08;H01L33/32;H01L33/16 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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