| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase deposition apparatus which can make a wafer autorotate freely irrespective of the presence or absence of revolution of a susceptor, and moreover can perform vapor phase growth without influencing the rotation of the wafer even if vapor phase growth conditions change in order to make variation in a film thickness of an epitaxial wafer still smaller than before. SOLUTION: The vapor phase deposition apparatus 10 includes a reactor 11, a barrel type susceptor 12 arranged inside the reactor, and a tray 13 arranged on the surface of the susceptor to mount a wafer W, wherein the tray 13 rotates by a rotary shaft which is different from that of the barrel type susceptor 12, the barrel type susceptor 12 rotates by an electric motor 14 for revolution, and the tray 13 rotates by an electric motor 15 for rotation. COPYRIGHT: (C)2011,JPO&INPIT |
