| 发明名称 |
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS |
| 摘要 |
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
| 申请公布号 |
KR20110098788(A) |
申请公布日期 |
2011.09.01 |
| 申请号 |
KR20117015630 |
申请日期 |
2009.11.30 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YEDINAK JOSEPH A.;CHALLA ASHOK |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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