| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that stably has normally-off characteristics. SOLUTION: The nitride semiconductor device includes a substrate 1, a nitride semiconductor layer 2 formed on the substrate 1 and having a heterojunction interface 22a, and a recess 3 formed in the nitride semiconductor layer 2, wherein the nitride semiconductor layer 2 includes a carrier travel layer 22 formed on the substrate 1 and made of Alx1Inx2Ga1-x1-x2N (0≤x1<1, 0≤x2≤1, and 0≤(x1+x2)≤1), and a carrier supply layer 23 having a first layer 231 formed on the carrier travel layer 22 and made of AlyGa1-yN (0<y≤1, x1<y), a second layer 232 formed on the first layer 231 and made of GaN, and a third layer 233 formed on the second layer and made of AlzGa1-zN (0<z≤1, x1<z), and the recess 3 is formed penetrating the third layer 233 so that a main surface of the second layer 232 is exposed on a recess bottom surface 31. COPYRIGHT: (C)2011,JPO&INPIT |
